1999. 10. 20 1/2 semiconductor technical data KTA1046 epitaxial planar pnp transistor revision no : 2 ndustrial use. general purpose application. features low collector saturation voltage : v ce(sat) =-1.0v(max.) at i c =-2a, i b =-0.2a. complementary to ktc2026. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current i c -3 a base current i b -0.5 a collector power dissipation ta=25 1 p c 2 w tc=25 1 20 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-60v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-7v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -60 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-0.5a 100 - 300 h fe (2) v ce =-5v, i c =-3a 20 - - collector emitter saturation voltage v ce(sat) i c =-2a, i b =-0.2a - -0.25 -1.0 v base-emitter voltage v be v ce =-5v, i c =-0.5a - -0.7 -1.0 v transition frequency f t v ce =-5v, i c =-0.5a - 30 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 45 - pf switching time turn-on time t on - 0.4 - s storage time t stg - 1.7 - fall time t f - 0.5 - note : h fe (1) classification y:100 200, gr:150 300 i b1 15 ? b1 i cc v =-30v i b2 i b2 20 sec -i =i =0.2a 1% b1 b2 output duty cycle input 0 < =
1999. 10. 20 2/2 KTA1046 revision no : 2 collector current i (a) 0 c -1 collector-emitter voltage v (v) ce ce c i - v collector-emitter saturation ce(sat) -0.02 -0.3 -0.1 -0.02 collector current i (a) c v - i h - i c collector current i (a) fe dc current gain h transient thermal resistance th(t) 0.1 10 time t (sec) r - t -2 -3 -4 -5 -6 -1 -2 -3 -4 common emitter tc=25 c -80 -70 -60 -50 -40 -30 -20 0 i =-10ma b ce(sat) c voltage v (v) -1 -3 -5 -0.05 -0.1 -0.3 -0.5 -1 common emitter i /i =10 cb tc=100 c tc=25 c tc=-25 c fe c ce v =-5v common emitter 1k 500 300 100 50 -3 -1 -0.02 -0.1 -0.3 20 tc=100 c tc=25 c tc=-25 c th(t) r ( c/w) -3 -2 10 -1 10 1 10 2 10 1 10 100 1k (1) without heat sink (2) infinite heat sink (1) ta=25 c (2) tc=25 c i max.(pulsed)* c (continuous) c i max. safe operating area ce collector-emitter voltage v (v) -1 -3 -10 -100 -0.1 c collector current i (a) -30 -5 -50 -0.3 -0.5 -1 -3 -5 -10 curves must be derated linearly with increase in temperature single nonrepetitive pulse tc=25 c * 1ms* 10ms* 1 0 0 ms * dc o per a t i o n v max. ceo
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